The first plurality comprises: a layer of a first conductivity typeīeing arranged in or on the common substrate and a dark currentĭiode of the second plurality comprises: a layer of a firstĬonductivity type being arranged in or on the common substrate and The ambient light detector of claim 1, wherein a photodiode of The first plurality of photodiodes and the mirror transistor.ġ0. The mirror transistor and connected with its control input between The ambient light detector of claim 6, wherein the gain settingĮlement comprises a gain setting transistor arranged in parallel to The gain setting element is substantially permanent.ĩ. The ambient light detector of claim 6, wherein the coupling of

Signal input and to a lower gain when coupled to the second signalĨ. The ambient light detector of claim 6, wherein the gain settingĮlement is configured to set a high gain, when coupled to the first Second signal input, the second signal input being a supplyħ. Setting element to be coupled to a first signal input or to a The ambient light detector of claim 1, further comprising a gain Limiter comprises a current sensing resistor coupled to a clampingĮlement, said current sensing resistor configured to control aĬurrent limiting element arranged in parallel to the mirrorĦ. The ambient light detector of claim 4, wherein the current The ambient light detector of claim 1, further comprising aĬurrent limiter configured to limit a current in the first currentĥ. The second plurality of dark current diodes and the referenceĤ. Plurality of photodiodes and the mirror transistor and/or theĬompensation device is coupled to the second current path between The ambient light detector of claim 2, wherein the compensationĭevice is coupled to the first current path between the first Least one of the first and second current path in response toģ. The ambient light detector of claim 1, further comprising: aĬompensation device for providing a compensation current in at Second plurality of dark current diodes are laterally arranged inĢ. Plurality, and wherein the first plurality of photodiodes and the Transistor and the reference transistor comprise a parameter ratioĬorresponding to a ratio between the first plurality and the second Transistor in the second current path, wherein the mirror Mirror transistor in the first current path and a reference Respective dark current diode from being illuminated, and whereinĮach blocking element completely covers the respective dark currentĭiode and extends laterally between the respective dark currentĭiode and at least one adjacent photodiode of the first pluralityĪnd over a portion of the at least one adjacent photodiode and a Plurality has a blocking element configured to shield the Plurality, wherein each of the dark current diodes of the second Mirror comprising: a first plurality of photodiodes in a firstĬurrent path a second plurality of dark current diodes in a secondĬurrent path, the second plurality different from the first An ambient light detector having a current mirror, the current 2, May 2014, pp.Īttorney, Agent or Firm: Slater Matsil, LLPġ. Technolgies,' Electrical and Electronics Engineering: An Mohamed Atef, 'Intergrated Photodiodes in Nanometer CMOS Geiger-mode avalanche diodes in standard CMOS technologies,' Vignetti, et al, 'Design guidelines for the integration of Suppression in Variable-Temperature Systems', Sensors, 2017, ('High Performance CMOS Light Detector with Dark Current Larger than the second plurality and the first plurality of sensorĮlements and the second plurality of reference elements areĪrranged in an array, and wherein a sensor element and a referenceĮlement are laterally arranged on or in a common layer substrate Second plurality of reference elements, each reference elementĬonfigured to provide a reference signal and each including aīlocking element configured to shield the respective referenceĮlement from being illuminated, wherein the first plurality is

To provide a signal in response to a level of illumination and a In an embodiment an ambient light sensor includes aįirst plurality of sensor elements, each sensor element configured Invention is credited to Andrey Lysov, Hoa Vu.Īmbient light detector, detector array and methodĪn ambient light detector, a detector array and a method areĭisclosed. The grantee listed for this patent is OSRAM Opto Semiconductors GmbH. This patent grant is currently assigned to OSRAM OPTO SEMICONDUCTORS GMBH. patent number 10,852,182 was granted by the patent office on for ambient light detector, detector array and method.

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